bc546 / bc547 / bc548 / bc549 / bc550 ? npn epitaxial silicon transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com bc546 / bc547 / bc548 / bc549 / bc550 rev. 1.1.0 1 april 2014 bc546 / bc547 / bc548 / bc549 / bc550 npn epitaxial silicon transistor features ? switching and amplifier ? high-voltage: bc546, v ceo = 65 v ? low-noise: bc549, bc550 ? complement to bc556, bc557, bc558, bc559, and bc560 ordering information part number marking package packing method bc546abu bc546a to-92 3l bulk bc546ata bc546a to-92 3l ammo bc546bta bc546b to-92 3l ammo bc546btf bc546b to-92 3l tape and reel bc546cta bc546c to-92 3l ammo BC547Ata BC547A to-92 3l ammo bc547b bc547b to-92 3l bulk bc547bbu bc547b to-92 3l bulk bc547bta bc547b to-92 3l ammo bc547btf bc547b to-92 3l tape and reel bc547cbu bc547c to-92 3l bulk bc547cta bc547c to-92 3l ammo bc547ctfr bc547c to-92 3l tape and reel bc548bu bc548 to-92 3l bulk bc548bta bc548b to-92 3l ammo bc548cta bc548c to-92 3l ammo bc549bta bc549b to-92 3l ammo bc549btf bc549b to-92 3l tape and reel bc549cta bc549c to-92 3l ammo bc550cbu bc550c to-92 3l bulk bc550cta bc550c to-92 3l ammo 1. collector 2. base 3. emitter to-92 1
bc546 / bc547 / bc548 / bc549 / bc550 ? npn epitaxial silicon transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com bc546 / bc547 / bc548 / bc549 / bc550 rev. 1.1.0 2 absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. in addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. values are at t a = 25c unless otherwise noted. electrical characteristics values are at t a = 25c unless otherwise noted. h fe classification symbol parameter value unit v cbo collector-base voltage bc546 80 v bc547 / bc550 50 bc548 / bc549 30 v ceo collector-emitter voltage bc546 65 v bc547 / bc550 45 bc548 / bc549 30 v ebo emitter-base voltage bc546 / bc547 6 v bc548 / bc549 / bc550 5 i c collector current (dc) 100 ma p c collector power dissipation 500 mw t j junction temperature 150 c t stg storage temperature range -65 to +150 c symbol parameter conditions min. typ. max. unit i cbo collector cut-off current v cb = 30 v, i e = 0 15 na h fe dc current gain v ce = 5 v, i c = 2 ma 110 800 v ce (sat) collector-emitter saturation voltage i c = 10 ma, i b = 0.5 ma 90 250 mv i c = 100 ma, i b = 5 ma 250 600 v be (sat) collector-base saturation voltage i c = 10 ma, i b = 0.5 ma 700 mv i c = 100 ma, i b = 5 ma 900 v be (on) base-emitter on voltage v ce = 5 v, i c = 2 ma 580 660 700 mv v ce = 5 v, i c = 10 ma 720 f t current gain bandwidth product v ce = 5 v, i c = 10 ma, f = 100 mhz 300 mhz c ob output capacitance v cb = 10 v, i e = 0, f = 1 mhz 3.5 6.0 pf c ib input capacitance v eb = 0.5 v, i c = 0, f = 1 mhz 9 pf nf noise figure bc546 / bc547 / bc548 v ce = 5 v, i c = 200 a, f = 1 khz, r g = 2 k 210 db bc549 / bc550 1.2 4.0 bc549 v ce = 5 v, i c = 200 a, r g = 2 k , f = 30 to 15000 mhz 1.4 4.0 bc550 1.4 3.0 classification a b c h fe 110 ~ 220 200 ~ 450 420 ~ 800
bc546 / bc547 / bc548 / bc549 / bc550 ? npn epitaxial silicon transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com bc546 / bc547 / bc548 / bc549 / bc550 rev. 1.1.0 3 typical performance characteristics figure 1. static characteristic fi gure 2. transfer characteristic figure 3. dc current gain figure 4. base-emitter saturation voltage and collector-emi tter saturation voltage figure 5. output capacitance figure 6. current gain bandwidth product 0 2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 i b = 50 a i b = 100 a i b = 150 a i b = 200 a i b = 250 a i b = 300 a i b = 350 a i b = 400 a i c [ma], collector current v ce [v], collector-emitter voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 v ce = 5v i c [ma], collector current v be [v], base-emitter voltage 1 10 100 1000 1 10 100 1000 v ce = 5v h fe , dc current gain i c [ma], collector current 1 10 100 1000 10 100 1000 10000 i c = 10 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[mv], saturation voltage i c [a], collector current 1 10 100 1000 0.1 1 10 100 f=1mhz i e = 0 c ob [pf], capacitance v cb [v], collector-base voltage 0.1 1 10 100 1 10 100 1000 v ce = 5v f t , current gain-bandwidth product i c [ma], collector current
bc546 / bc547 / bc548 / bc549 / bc550 ? npn epitaxial silicon transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com bc546 / bc547 / bc548 / bc549 / bc550 rev. 1.1.0 4 physical dimensions figure 7. 3-lead, to92, jede c to-92 compliant straight le ad configuration (old to92am3) package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the drawi ng and contact a fairchild semi conductor representative to ver ify or obtain the most recent revision. package specifications do not ex pand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconduct or?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/za/za03d.pdf . for current tape and reel specifications, visit fair child semiconductor?s online packaging area: http://www.fairchildsemi.com/packing_dwg/pkg-za03d_bk.pdf . d to-92 (bulk)
bc546 / bc547 / bc548 / bc549 / bc550 ? npn epitaxial silicon transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com bc546 / bc547 / bc548 / bc549 / bc550 rev. 1.1.0 5 physical dimensions (continued) figure 8. 3-lead, to92, molded 0.200 in line spacing lead form (j61z option) package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the drawi ng and contact a fairchild semi conductor representative to ver ify or obtain the most recent revision. package specifications do not ex pand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconduct or?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/za/za03f.pdf . for current tape and reel specifications, visit fair child semiconductor?s online packaging area: http://www.fairchildsemi.com/p acking_dwg/pkg-za03f_bk.pdf . to-92 (ammo, tape and reel)
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